According to IMARC Group, titled “Ferroelectric RAM Market Size: Global Industry Trends, Share, Growth, Opportunity and Forecast 2021-2026,” The global ferroelectric RAM market exhibited strong growth during 2015-2020. Looking forward, IMARC Group expects the market to grow at a CAGR of around 17% during 2021-2026.
Ferroelectric Random-Access Memory (FRAM), also known as a FeRAM,is a type of memory that utilizes a ferroelectric film instead of a dielectric layer to achieve non volatility. It is similar in construction to dynamic random-access memory (DRAM). The memory cell of FRAM is comprised of a bit line and a capacitor connected to a plate. FRAM offers various advantages, such as faster write performance, high endurance, greater data reliability and more write-erase cycles.
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Global Ferroelectric RAM Market 2021-2026 Analysis and Segmentation:
The competitive landscape of the market has been studied in the report with the detailed profiles of the key players operating in the market.
Fujitsu Limited (Furukawa Group), Infineon Technologies AG, International Business Machines Corporation, LAPIS Semiconductor Co. Ltd. (Rohm Semiconductor), Samsung Electronics Co. Ltd., Texas Instruments Incorporated and Toshiba Corporation.
The report has segmented the market on the basis on region, type, application and end-use.
Breakup by Type:
Breakup by Application:
Breakup by End-Use:
Breakup by Region:
North America: (United States, Canada)
Asia Pacific: (China, Japan,India, South Korea, Australia, Indonesia, Others)
Europe: (Germany, France,United Kingdom, Italy, Spain, Russia, Others)
Latin America: (Brazil, Mexico, Others)
Middle East and Africa
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